BSM50GD120DN2E3226 INFINEON TECHNOLOGIES IGBT Modules N-CH 1.2KV 50A

Part Nnumber
BSM50GD120DN2E3226
Description
IGBT Modules N-CH 1.2KV 50A
Producer
INFINEON TECHNOLOGIES
Basic price
135,43 EUR

The product with part number BSM50GD120DN2E3226 (IGBT Modules N-CH 1.2KV 50A) is from company INFINEON TECHNOLOGIES and distributed with basic unit price 135,43 EUR. Minimal order quantity is 10 pc, Approx. production time is 14 weeks.


Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Hex Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 200 nA Power Dissipation: 350 W Maximum Operating Temperature: + 150 C Package/Case: EconoPACK 2 Packaging: Reel Brand: Infineon Technologies Maximum Gate Emitter Voltage: 20 V Mounting Style: Screw Factory Pack Quantity: 10


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