IPP023N10N5AKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 100V 120A TO220-3 N-Channel 100V 120A (Tc) 375W (Tc) Through Hole PG-TO-220-3

Part Nnumber
IPP023N10N5AKSA1
Description
MOSFET N-CH 100V 120A TO220-3 N-Channel 100V 120A (Tc) 375W (Tc) Through Hole PG-TO-220-3
Producer
INFINEON TECHNOLOGIES
Basic price
4,92 EUR

The product with part number IPP023N10N5AKSA1 (MOSFET N-CH 100V 120A TO220-3 N-Channel 100V 120A (Tc) 375W (Tc) Through Hole PG-TO-220-3) is from company INFINEON TECHNOLOGIES and distributed with basic unit price 4,92 EUR. Minimal order quantity is 500 pc, Approx. production time is 84 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Vgs(th) (Max) @ Id 3.8V @ 270µA Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 50V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 375W (Tc) Rds On (Max) @ Id, Vgs 2.3 mOhm @ 100A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3


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