IRFU3410PBF INFINEON TECHNOLOGIES MOSFET N-CH 100V 31A I-PAK N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Through Hole IPAK (TO-251)

Part Nnumber
IRFU3410PBF
Description
MOSFET N-CH 100V 31A I-PAK N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Through Hole IPAK (TO-251)
Producer
INFINEON TECHNOLOGIES
Basic price
1,15 EUR

The product with part number IRFU3410PBF (MOSFET N-CH 100V 31A I-PAK N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Through Hole IPAK (TO-251)) is from company INFINEON TECHNOLOGIES and distributed with basic unit price 1,15 EUR. Minimal order quantity is 75 pc, Approx. production time is 98 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1690pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs 39 mOhm @ 18A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA


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