IRF6655TRPBF INFINEON TECHNOLOGIES MOSFET N-CH 100V 4.2A DIRECTFET N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH

Part Nnumber
IRF6655TRPBF
Description
MOSFET N-CH 100V 4.2A DIRECTFET N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH
Producer
INFINEON TECHNOLOGIES
Basic price
1,38 EUR

The product with part number IRF6655TRPBF (MOSFET N-CH 100V 4.2A DIRECTFET N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH) is from company INFINEON TECHNOLOGIES and distributed with basic unit price 1,38 EUR. Minimal order quantity is 1 pc, Approx. production time is 70 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.8V @ 25µA Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs 62 mOhm @ 5A, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ SH Package / Case DirectFET™ Isometric SH


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