BSC190N12NS3 G INFINEON TECHNOLOGIES MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3

Part Nnumber
BSC190N12NS3 G
Description
MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3
Producer
INFINEON TECHNOLOGIES
Basic price
1,67 EUR

The product with part number BSC190N12NS3 G (MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3) is from company INFINEON TECHNOLOGIES and distributed with basic unit price 1,67 EUR. Minimal order quantity is 1 pc, Approx. production time is 20 weeks.


Infineon Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 44 A Vds - Drain-Source Breakdown Voltage: 120 V Rds On - Drain-Source Resistance: 19 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 26 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 69 W Mounting Style: SMD/SMT Package/Case: TDSON-8 Packaging: Reel Brand: Infineon Technologies Configuration: Single Fall Time: 4 ns Forward Transconductance - Min: 45 S, 23 S Minimum Operating Temperature: - 55 C Rise Time: 16 ns Series: OptiMOS 3 Factory Pack Quantity: 5000 Tradename: OptiMOS Typical Turn-Off Delay Time: 22 ns Part # Aliases: BSC190N12NS3GATMA1 SP000652752


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