IPI075N15N3GXKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 150V 100A TO262-3 N-Channel 150V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
Part Nnumber
IPI075N15N3GXKSA1
Description
MOSFET N-CH 150V 100A TO262-3 N-Channel 150V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
Producer
INFINEON TECHNOLOGIES
The product with part number IPI075N15N3GXKSA1 (MOSFET N-CH 150V 100A TO262-3 N-Channel 150V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3)
is from company INFINEON TECHNOLOGIES and distributed with basic unit price 5,28 EUR. Minimal order quantity is 500 pc, Approx. production time is 84 weeks.
Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5470pF @ 75V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 300W (Tc) Rds On (Max) @ Id, Vgs 7.5 mOhm @ 100A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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