IRF640NSTRLPBF INFINEON TECHNOLOGIES MOSFET N-CH 200V 18A D2PAK N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK

Part Nnumber
IRF640NSTRLPBF
Description
MOSFET N-CH 200V 18A D2PAK N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK
Producer
INFINEON TECHNOLOGIES
Basic price
1,05 EUR

The product with part number IRF640NSTRLPBF (MOSFET N-CH 200V 18A D2PAK N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK) is from company INFINEON TECHNOLOGIES and distributed with basic unit price 1,05 EUR. Minimal order quantity is 1 pc, Approx. production time is 84 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 150W (Tc) Rds On (Max) @ Id, Vgs 150 mOhm @ 11A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB


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