IRFB31N20DPBF INFINEON TECHNOLOGIES MOSFET N-CH 200V 31A TO-220AB N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB

Part Nnumber
IRFB31N20DPBF
Description
MOSFET N-CH 200V 31A TO-220AB N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB
Producer
INFINEON TECHNOLOGIES
Basic price
2,23 EUR

The product with part number IRFB31N20DPBF (MOSFET N-CH 200V 31A TO-220AB N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB) is from company INFINEON TECHNOLOGIES and distributed with basic unit price 2,23 EUR. Minimal order quantity is 50 pc, Approx. production time is 84 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 3.1W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs 82 mOhm @ 18A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3


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