BSZ0909NSATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 34V 9A 8TSDSON N-Channel 34V 9A (Ta), 36A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8
Part Nnumber
BSZ0909NSATMA1
Description
MOSFET N-CH 34V 9A 8TSDSON N-Channel 34V 9A (Ta), 36A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8
Producer
INFINEON TECHNOLOGIES
The product with part number BSZ0909NSATMA1 (MOSFET N-CH 34V 9A 8TSDSON N-Channel 34V 9A (Ta), 36A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8)
is from company INFINEON TECHNOLOGIES and distributed with basic unit price 0,59 EUR. Minimal order quantity is 1 pc, Approx. production time is 70 weeks.
Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 34V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 2.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs 12 mOhm @ 20A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN
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