BFP 640ESD H6327 INFINEON TECHNOLOGIES RF Bipolar Transistors RF BIP TRANSISTORS

Part Nnumber
BFP 640ESD H6327
Description
RF Bipolar Transistors RF BIP TRANSISTORS
Producer
INFINEON TECHNOLOGIES
Basic price
0,98 EUR

The product with part number BFP 640ESD H6327 (RF Bipolar Transistors RF BIP TRANSISTORS) is from company INFINEON TECHNOLOGIES and distributed with basic unit price 0,98 EUR. Minimal order quantity is 1 pc, Approx. production time is 12 weeks.


Infineon Product Category: RF Bipolar Transistors RoHS:  Details Transistor Type: Bipolar Technology: SiGe Transistor Polarity: NPN Frequency: 45 GHz DC Collector/Base Gain hFE Min: 110 Collector- Emitter Voltage VCEO Max: 4.1 V Continuous Collector Current: 50 mA Configuration: Single Dual Emitter Power Dissipation: 200 mW Mounting Style: SMD/SMT Package/Case: SOT-343 Packaging: Reel Brand: Infineon Technologies Series: BFP640 Factory Pack Quantity: 3000 Part # Aliases: BFP640ESDH6327XTSA1 SP000785482


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(keyword BFP 640ESD H6327 INFINEON TECHNOLOGIES RF Bipolar Transistors RF BIP TRANSISTORS)
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